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2SK3125
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI)
2SK3125
DC-DC Converter, Relay Drive and Motor Drive Applications
Unit: mm
* * * *
Low drain-source ON resistance: RDS (ON) = 5.3 m (typ.) High forward transfer admittance: |Yfs| = 60 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 30 V) Enhancement model: Vth = 1.5~3.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 30 30 20 70 210 150 955 70 15 150 -55~150 Unit V V V A W mJ A mJ C C
Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
JEDEC JEITA TOSHIBA
2-16H1A
Weight: 3.65 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics Thermal resistance, channel to case Symbol Rth (ch-c) Max 0.833 Unit C/W
Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: VDD = 25 V, Tch = 25C, L = 140 H, RG = 25 , IAR = 70 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution.
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Electrical Characteristics (Ta = 25C)
Characteristics Gate leakage current Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS IDSS V (BR) DSS Vth RDS (ON) Yfs Ciss Crss Coss tr ID = 30 A VOUT RL = 0.5 VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = 30 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 30 A VDS = 10 V, ID = 30 A Min 30 1.5 30 Typ. 5.3 60 4600 1400 2300 25 Max 10 100 3.0 7.0 pF Unit A A V V m S
10 V VGS 0V 4.7

ns

Turn-ON time Switching time Fall time
ton
40
tf
VDD 15 V - Duty < 1%, tw = 10 s =
150

nC
Turn-OFF time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") charge
toff Qg Qgs Qgd

425
130 90 40
VDD 24 V, VGS = 10 V, ID = 70 A -

Source-Drain Ratings and Characteristics (Ta = 25C)
Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition IDR = 70 A, VGS = 0 V IDR = 70 A, VGS = 0 V, dIDR/dt = 50 A/s Min Typ. 150 225 Max 70 210 -1.7 Unit A A V ns nC
Marking
TOSHIBA
K3125
Part No. (or abbreviation code) Lot No.
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2SK3125
ID - VDS
100 Common source Tc = 25C Pulse test 8 60 4 6 10 100 5 4.5 10 8 80 6 5 4.5
ID - VDS
Common source Tc = 25C Pulse test
80
4.25
Drain current ID (A)
Drain current ID (A)
60
4
40
3.75 3.5
40
VOU
3.5
20 VGS = 3.25 V 0 0
20 VGS = 3.25 V 0 0
0.2
0.4
0.6
0.8
1
1
2
3
4
5
Drain-source voltage
VDS (V)
Drain-source voltage
VDS (V)
ID - VGS
1.2
VDS - VGS
Common source Tc = 25C Pulse test
Drain current ID (A)
80
VDS (V) Drain-source voltage
100
1.0
0.8
60
0.6 ID = 70 A
40
25
Tc = -55C
0.4
20
100
0 0
Common source VDS = 10 V Pulse test 3 4 5 6
0.2
30 15 2 4 6 8 10 12
1
2
0 0
Gate-source voltage
VGS (V)
Gate-source voltage
VGS (V)
Yfs - ID
1000 100
RDS (ON) - ID
Forward transfer admittance Yfs
(S)
100
Tc = -55C 100
25
Drain-source ON resistance RDS (ON) (m)
10 VGS = 10, 15 V
10
1 1
Common source VDS = 10 V Pulse test 10 100 1000 1 1
Common source Tc = 25C Pulse test 10 100
Drain current ID (A)
Drain current ID (A)
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2SK3125
RDS (ON) - Tc
20 Common source VGS = 10 V Pulse test 1000
IDR - VDS
Drain-source ON resistance RDS (ON) ()
16
IDR
(A)
100
10 5 3
8
ID = 15, 30 A 70
Drain reverse current
12
10 1
VGS = 0 V, -1 V
4
Common source Tc = 25C Pulse test 1 0 0.4 0.8 1.2 1.6 2.0
0 -80
-40
0
40
80
120
160
Case temperature Tc (C)
Drain-source voltage
VDS (V)
Vth - Tc
5 50
Dynamic input/output characteristics
Common source ID = 70 A Tc = 25C Pulse test 25
4
VDS (V)
40
20
Gate threshold voltage
VDS 20
6 10 VDD = 24 V
2
1
Common source VDS = 10 V ID = 1 mA Pulse test -40 0 40 80 120 160
10 VGS 0 0
5
0 -80
40
80
120
160
0 200
Case temperature Tc (C)
Total gate charge Qg (nC)
PD - Tc
200
Drain power dissipation PD (W)
150
100
50
0 0
40
80
120
160
200
Case temperature Tc (C)
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Gate threshold voltage
Drain-source voltage
3
30
12
15
VGS (V)
Vth (V)
2SK3125
rth - tw
10
Normalized transient thermal impedance rth (t)/Rth (ch-c)
1
Duty = 0.5 0.2 0.1 PDM t T Single pulse 0.01 Duty = t/T Rth (ch-c) = 0.833C/W 1m 10 m 100 m 1 10
0.1
0.05 0.02
0.01 10
100
Pulse width
tw
(S)
1000
Safe operating area
1000
EAS - Tch
ID max (pulse) * 100 s *
Avalanche energy EAS (mJ)
800
Drain current ID (A)
100
ID max (continuous)
1 ms *
600
DC operation Tc = 25C 10 * Single nonrepetitive pulse Tc = 25C Curves must be derated linearly with increase in temperature. 1
400
200
VDSS max 10 100
0 25
50
75
100
125
150
1 0.1
Channel temperature (initial) Tch (C)
Drain-source voltage
VDS (V)
15 V -15 V
BVDSS IAR VDD VDS
Test circuit RG = 25 VDD = 25 VL = 140 H
Wave form
AS =
1 B VDSS L I2 B 2 VDSS - VDD
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RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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